t4 - lds -0 186 -1, rev . 1 (12 1219 ) ?201 2 microsemi corporation page 1 of 7 2n2904 al and 2n2905 al available on commercial versions pn p switching silicon transistor qualified per mil - prf - 19500/290 qualified levels : jan, jantx , jantxv and jans description this family of 2n2904 al and 2n2905 al switching transistors are military qualified up to the jans level for high - reliability applications . these devices are also available in a to- 39 package . microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. to -5 package also available in : to - 39 (to - 205ad) package ( long - leaded) 2n2904 & 2n2905a important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 2904 through 2n 2905 series. ? jan, jantx, jantxv, and jans qualifications ar e available per mil - prf - 19500/290. (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only). applications / benefits ? general purpose transistors for high speed s witching applications. ? military and other high - reliability applications. maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit collector - emitter voltage v ceo 60 v collector - base voltage v cbo 60 v emitter- base voltage v ebo 5.0 v thermal resistance junction - to - ambient r ? ja 195 o c/w thermal resistance junction - to - case r ? jc 50 o c/w collector current i c 600 ma total power dissipation @ t a = +25 c (1) @ t c = + 25 c (2) p t 0.8 3 .0 w operating & storage junction temperature range t j and t stg - 65 to +200 c notes : 1. for d erat ing, see figures 1 and 2 . 2. for thermal impedance, see figures 3 and 4 . downloaded from: http:///
t4 - lds -0 186 -1, rev . 1 (12 1219 ) ?201 2 microsemi corporation page 2 of 7 2n2904 al and 2n2905 al mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap. ? terminals: tin/ l ead plate or rohs compliant m atte/ t in (commercial grade only) over nickel. ? marking: part number, d ate c ode, m anufacturers id. ? polarity: pn p (see package outline). ? weight: approximately 1.14 grams . ? see p ackage d imensions on last pa ge. part nomenclature jan 2n2904 a l (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial jedec type number (see electrical characterist ic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant long leaded electrical parameter modifier symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance . i ceo c ollector cutoff current, base open . i cex c ollector cutoff current, circuit between base and emitter . i ebo e mitter cutoff current, collector open . h fe c ommon - emitter static forward current transfer ratio . v ceo c ollector - emitter voltage, base op en . v cbo c ollector - emitter voltage, emitter open . v ebo e mitter - base voltage, collector open . downloaded from: http:///
t4 - lds -0 186 -1, rev . 1 (12 1219 ) ?201 2 microsemi corporation page 3 of 7 2n2904 al and 2n2905 al electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off character istics collector - emi tter breakdown current v (br)ceo v i c = 10 ma 60 collector - emitter cutoff voltage v ce = 60 v i ces 1.0 a collector - base cutoff current v cb = 60 v all types i cbo1 10 a v cb = 50 v 2n2904a l , 2n2905a l i cbo2 10 na v cb = 50 v @ t a = +1 50 oc 2n2904a l , 2n2905a l i cbo3 10 a collector - base cutoff current v cb = 50 v i cbo 10 na v cb = 60 v 10 a emitter - base cutoff current v eb = 3.5 v v eb = 5.0 v i ebo 50 10 na a on character istics (1) forward - current transfer ratio h fe i c = 0.1 ma, v ce = 10 v 2n2904al 2n2905al 40 75 i c = 1.0 ma, v ce = 10 v 2n2904al 2n2905al 40 100 175 450 i c = 10 ma , v ce = 10 v 2n2904al 2n2905al 40 100 i c = 150 ma, v ce = 10 v 2n2904al 2n2905al 40 100 120 300 i c = 500 ma, v ce = 1 0 v 2n2904al 2n2905al 40 50 collector - emitter saturation voltage v ce(sat) v i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.4 1.6 base - emitter saturation voltage v be(sat) v i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 1.3 2.6 (1) pulse test: pulse width = 300 s, duty cycle 2.0%. downloaded from: http:///
t4 - lds -0 186 -1, rev . 1 (12 1219 ) ?201 2 microsemi corporation page 4 of 7 2n2904 al and 2n2905 al electrical characteristics @ t a = +25 c, unless otherwise noted (continued) dynamic characteristics parameters / test conditions symbol min. max. unit small - signal short - circuit forward - current tr ansfer ratio i c = 1.0 ma, v ce = 10 v, f = 1.0 khz h fe 100 small - signal short - circuit forward - current transfer ratio |h fe | 2.0 i c = 50 ma, v ce = 20 v, f = 100 mhz output capacitance c obo pf v cb = 10 v, i e = 0, 100 khz f 1.0mhz 8.0 iutput capacitance c ibo pf v eb = 2.0 v, i c = 0, 100 khz f 1.0mhz 30 switching characteristics parameters / test conditions symbol min. max. unit turn- on time t on 45 ns turn- off time t off 300 ns downloaded from: http:///
t4 - lds -0 186 -1, rev . 1 (12 1219 ) ?201 2 microsemi corporation page 5 of 7 2n2904 al and 2n2905 al graphs t a ( c) (ambient) figure 1 derating (r ja ) pcb tc ( o c) (case) figure 2 derating (r ja ) pcb dc operation maximum rating (w) dc operation maximum rating (w) downloaded from: http:///
t4 - lds -0 186 -1, rev . 1 (12 1219 ) ?201 2 microsemi corporation page 6 of 7 2n2904 al and 2n2905 al graphs (continued) time (s) figure 3 thermal impedance graph (r ja ) time (s) figure 4 thermal impe dance graph (r ja ) theta ( o c/w) theta ( o c /w) downloaded from: http:///
t4 - lds -0 186 -1, rev . 1 (12 1219 ) ?201 2 microsemi corporation page 7 of 7 2n2904 al and 2n2905 al package dimensions notes: 1. dimension s a re in inches. 2. millimeters are given for general information only. 3. beyond r (radius) maximum, t w shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd , cd, and q. 6. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 7. dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11 . i n accordance with asme y14.5m, diameters are equivalent to x symbology. 12. for l suffix devices, dimension ll is 1.50 (38.10 mm) minimum, 1.75 (44.45 mm) maximum. 13 . lead 1 = emitter, lead 2 = base, lead 3 = collector. dimensions symbol inch millimeters note min max min max cd 0.305 0.335 7.75 8.51 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 lc 0.200 tp 5.08 tp 6 ld 0.016 0.021 0.41 0.53 7, 8 ll 0.500 0.750 1 2.70 19.05 7, 8, 12 lu 0.016 0.019 0.41 0.48 7, 8 l1 0.050 1.27 7, 8 l2 0.250 6.35 7, 8 p 0.100 2.54 q 0.050 1.27 5 tl 0.029 0.045 0.74 1.14 4 tw 0.028 0.034 0.71 0.86 3 r 0.010 0.25 10 45 tp 45 tp 6 downloaded from: http:///
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